Impacts of Ti on electrical properties of Ge metal–oxide–semiconductor capacitors with ultrathin high-k LaTiON gate dielectric
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چکیده
منابع مشابه
Electrical Properties of Ultrathin Hf-Ti-O Higher k Gate Dielectric Films and Their Application in ETSOI MOSFET
Ultrathin Hf-Ti-O higher k gate dielectric films (~2.55 nm) have been prepared by atomic layer deposition. Their electrical properties and application in ETSOI (fully depleted extremely thin SOI) PMOSFETs were studied. It is found that at the Ti concentration of Ti/(Ti + Hf) ~9.4%, low equivalent gate oxide thickness (EOT) of ~0.69 nm and acceptable gate leakage current density of 0.61 A/cm2 @ ...
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School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756, Korea Measurement and Analysis Division, National Nanofab Center (NNFC), Daejeon 305-343, Korea Department of Advanced Materials Science and Engineering, Dankook University, Cheongan 330-714, Korea Department of BIN Fusion Technology, Chonbuk National Univ...
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ژورنال
عنوان ژورنال: Applied Physics A
سال: 2010
ISSN: 0947-8396,1432-0630
DOI: 10.1007/s00339-010-5665-5